Title :
Electrical and optical characterizations of an n-BaSi2/p-Si hetero-junction for solar cell applications
Author :
Weijie Du ; Baba, M. ; Toko, Kiyoshi ; Usami, Noritaka ; Suemasu, Takashi
Author_Institution :
Inst. of Appl. Phys., Univ. of Tsukuba, Tsukuba, Japan
Abstract :
An n-BaSi2/p-Si hetero-junction has been successfully fabricated by molecular beam epitaxy (MBE) of the undoped n-BaSi2 layer on the p-Si substrate. The θ-2θ x-ray diffraction (XRD) pattern indicated the good crystalline quality of the epitaxial film. Clear rectifying property has been observed in the J-V characteristics of this p-n junction. From the C-V measurements, the carrier (electrons) density in the n-BaSi2 layer was about 2×1016 cm-3, and the built-in potential was about 1.5 V. The quantum efficiency obtained from the sample revealed that BaSi2 is a very promising material for solar cells applications.
Keywords :
X-ray diffraction; barium compounds; carrier density; molecular beam epitaxial growth; p-n heterojunctions; solar cells; BaSi2-Si; J-V characteristics; MBE; XRD pattern; carrier density; crystalline quality; electrical characterizations; electrons; epitaxial film; heterojunction; molecular beam epitaxy; optical characterizations; p-n junction; quantum efficiency; rectifying property; solar cell applications; x-ray diffraction; Junctions; Molecular beam epitaxial growth; Photovoltaic cells; Silicon; Substrates; Temperature measurement; BaSi2; MBE; hetero-junction; quantum efficiency; solar cells;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6925588
