Author :
Batignani, G. ; Bosisio, L. ; Conti, A. ; Focardi, E. ; Forti, F. ; Giorgi, M.A. ; Grandi, M. ; Parrini, G. ; Tempesta, P. ; Tonelli, G. ; Triggiani, G.
Abstract :
Several 5×5 cm2 double-sided readout silicon strip detectors have been fabricated using planar technology. Electrical characteristics (I-V and C-V curves interstrip resistance versus bias voltage) have been measured. Some detectors have been tested with a scanning electron microscope to investigate defects due to the fabrication process. A few of them have been tested with a β source and with a 50-GeV electron beam. A strong correlation is observed between charges collected on the ohmic side and on the junction side. Preliminary results on capacitive charge division studies are also presented
Keywords :
electron detection and measurement; semiconductor counters; C-V curves; I-V; Si; bias voltage; capacitive charge division; double sided readout silicon strip detectors; interstrip resistance; Detectors; Electric resistance; Electric variables; Electric variables measurement; Electrical resistance measurement; Electrons; Silicon; Strips; Testing; Voltage measurement;
