Title :
Temperature-dependent time-resolved photoluminescence study of monocrystalline CdTe/MgCdTe double heterostructures with low defect density
Author :
Xin-Hao Zhao ; DiNezza, Michael J. ; Shi Liu ; Jayathilaka, P.A.R.D. ; Noriega, O.C. ; Myers, T.H. ; Yong-Hang Zhang
Author_Institution :
Center for Photonics Innovation, Arizona State Univ., Tempe, AZ, USA
Abstract :
Confocal photoluminescence scans of monocrystalline CdTe/MgCdTe double heterostructures epitaxially grown on lattice-matched InSb substrates reveal very low twin defect density, below 1 × 105 cm-2. Room-temperature Shockley-Read-Hall (SRH) lifetimes of these samples are determined in the range of 35 ns to 86 ns using time-resolved photoluminescence (TRPL) measurements. Temperature-dependent TRPL measurements show that the carrier lifetime reaches a peak of 910 ns at 200 K. Excitation-dependent PL measurements reveal the radiative recombination coefficient of CdTe to be 4.3 × 10-9 cm3·s-1.
Keywords :
II-VI semiconductors; cadmium compounds; carrier lifetime; crystal defects; electron-hole recombination; epitaxial growth; magnesium compounds; molecular beam epitaxial growth; photoluminescence; solar cells; CdTe-MgCdTe; InSb; Shockley-Read-Hall lifetimes; carrier lifetime; confocal photoluminescence; epitaxial growth; excitation dependent photoluminescence; lattice matched substrates; low defect density; monocrystalline double heterostructure; radiative recombination; temperature 293 K to 298 K; temperature dependent time resolved photoluminescence; twin defect density; Abstracts; Indexes; Molecular beam epitaxial growth; Nuclear measurements; Temperature measurement; Thickness measurement; CdTe; carrier lifetime; defects; heterostructure; molecular beam epitaxy; photoluminescence;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6925634
