• DocumentCode
    122284
  • Title

    Temperature-dependent time-resolved photoluminescence study of monocrystalline CdTe/MgCdTe double heterostructures with low defect density

  • Author

    Xin-Hao Zhao ; DiNezza, Michael J. ; Shi Liu ; Jayathilaka, P.A.R.D. ; Noriega, O.C. ; Myers, T.H. ; Yong-Hang Zhang

  • Author_Institution
    Center for Photonics Innovation, Arizona State Univ., Tempe, AZ, USA
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    3272
  • Lastpage
    3275
  • Abstract
    Confocal photoluminescence scans of monocrystalline CdTe/MgCdTe double heterostructures epitaxially grown on lattice-matched InSb substrates reveal very low twin defect density, below 1 × 105 cm-2. Room-temperature Shockley-Read-Hall (SRH) lifetimes of these samples are determined in the range of 35 ns to 86 ns using time-resolved photoluminescence (TRPL) measurements. Temperature-dependent TRPL measurements show that the carrier lifetime reaches a peak of 910 ns at 200 K. Excitation-dependent PL measurements reveal the radiative recombination coefficient of CdTe to be 4.3 × 10-9 cm3·s-1.
  • Keywords
    II-VI semiconductors; cadmium compounds; carrier lifetime; crystal defects; electron-hole recombination; epitaxial growth; magnesium compounds; molecular beam epitaxial growth; photoluminescence; solar cells; CdTe-MgCdTe; InSb; Shockley-Read-Hall lifetimes; carrier lifetime; confocal photoluminescence; epitaxial growth; excitation dependent photoluminescence; lattice matched substrates; low defect density; monocrystalline double heterostructure; radiative recombination; temperature 293 K to 298 K; temperature dependent time resolved photoluminescence; twin defect density; Abstracts; Indexes; Molecular beam epitaxial growth; Nuclear measurements; Temperature measurement; Thickness measurement; CdTe; carrier lifetime; defects; heterostructure; molecular beam epitaxy; photoluminescence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
  • Conference_Location
    Denver, CO
  • Type

    conf

  • DOI
    10.1109/PVSC.2014.6925634
  • Filename
    6925634