DocumentCode
122285
Title
Extracting Cu diffusion parameters in polycrystalline CdTe
Author
Akis, R. ; Brinkman, D. ; Sankin, I. ; Fang, Tao ; Guo, Di ; Vasileska, D. ; Ringhofer, C.
Author_Institution
Sch. of ECEE, Arizona State Univ., Tempe, AZ, USA
fYear
2014
fDate
8-13 June 2014
Firstpage
3276
Lastpage
3281
Abstract
It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystal-line, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately.
Keywords
II-VI semiconductors; cadmium compounds; copper; finite difference methods; grain boundaries; grain boundary diffusion; solar cells; wide band gap semiconductors; CdTe:Cu; activation energies; bulk diffusion; cadmium telluride solar cell performance; concentration profile; diffusion parameters; finite-difference method; grain boundary diffusion coefficients; polycrystalline structure; simple functional forms; two-dimensional domain; Annealing; Finite difference methods; Fitting; Grain boundaries; Mathematical model; Photovoltaic cells; Temperature measurement; CdTe; copper; grain boundaries; impurity diffusion; numerical simulation; photovoltaic cells;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location
Denver, CO
Type
conf
DOI
10.1109/PVSC.2014.6925635
Filename
6925635
Link To Document