Title :
Simulation of the frequency behavior of external-cavity semiconductor lasers
Author :
Houssin, Marie ; Fermigier, Bruno ; Desaintfuscien, Michel
Author_Institution :
Lab. de l´´Horloge Atomique, Univ. Paris-Sud, Paris, France
fDate :
7/1/2003 12:00:00 AM
Abstract :
A theoretical model of semiconductor lasers mounted in external cavities is developed. The modes´ frequencies and gains are calculated. We study the frequency of the oscillating mode versus the laser injection current. We explain its hysteresis behavior by introducing in the model the coupling between the semiconductor gain and its index of refraction induced by fluctuations in carrier density. We also determine the influence of the laser diode output facet reflection coefficient on mode hops and frequency tuning. Theoretical simulations coincide well with experimental observations.
Keywords :
carrier density; laser cavity resonators; laser feedback; laser modes; laser theory; laser tuning; quantum well lasers; refractive index; semiconductor lasers; spectral analysis; carrier density fluctuations; external-cavity semiconductor lasers; frequency behavior simulation; frequency tuning; hysteresis behavior; index of refraction; laser diode output facet reflection coefficient; laser injection current; linewidth-enhancement factor; mode frequencies; mode gains; mode hops; optical feedback; oscillating mode frequency; semiconductor gain; spectral analysis; theoretical model; Charge carrier density; Diode lasers; Fluctuations; Frequency; Hysteresis; Laser modes; Laser theory; Laser tuning; Optical refraction; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2003.813186
