Title :
Development of large area p-Si surface barrier detectors and the associated charge sensitive preamplifier
Author :
Takami, Y. ; Shiraishi, F. ; Murakami, H. ; Sieminski, M. ; Isawa, N.
Author_Institution :
Inst. for Atomic Energy, Rikkyo Univ., Yokosuka, Japan
fDate :
2/1/1989 12:00:00 AM
Abstract :
Large-area Si surface barrier detectors (SDB), with 95 cm2 sensitive area and a charge-sensitive preamplifier, for use up to 105-pF input capacitance were developed. The noise width of the preamplifier had a slope of 7 eV/pF with respect to the input capacitance. The p-Si detectors were made of MCZ Si of 1.7-3.6-kΩ resistivity Si grown in an intense transverse magnetic field. The detector characteristics and the fabrication technique, including the surface treatment and passivation, are described in detail
Keywords :
elemental semiconductors; passivation; preamplifiers; semiconductor counters; silicon; surface treatment; 1.7 to 3.6 kohm; 105 pF; SDB; Si; charge sensitive preamplifier; detector characteristics; fabrication technique; large area p-Si surface barrier detectors; noise width; passivation; semiconductor detector; surface treatment; Acoustical engineering; Capacitance; Conductivity; Detectors; Fabrication; Magnetic fields; Magnetic noise; Passivation; Preamplifiers; Surface treatment;
Journal_Title :
Nuclear Science, IEEE Transactions on
