• DocumentCode
    1223069
  • Title

    Computer controlled drifting of Si(Li) detectors

  • Author

    Landis, D.A. ; Wong, Y.K. ; Walton, J.T. ; Goulding, F.S.

  • Author_Institution
    Lawrence Berkeley Lab., CA, USA
  • Volume
    36
  • Issue
    1
  • fYear
    1989
  • fDate
    2/1/1989 12:00:00 AM
  • Firstpage
    185
  • Lastpage
    189
  • Abstract
    A relatively inexpensive computer-controlled system for performing the drift process used in fabricating Si(Li) detectors is described. The system uses a small computer to monitor the leakage current, applied voltage, and temperature on eight individual drift stations. The associated computer program initializes the drift process, monitors the drift progress, and then terminates the drift when an operator set drift time has elapsed. The improved control of the drift with this system has been well demonstrated in the fabrication of a variety of Si(Li) detectors. A few representative system responses to detector behavior during the drift process are described
  • Keywords
    computerised control; elemental semiconductors; physics computing; semiconductor counters; silicon; Si:Li detectors; applied voltage; computer-controlled system; drift process; leakage current; semiconductor detector; temperature; Automatic control; Computerized monitoring; Control systems; Detectors; Fabrication; Leakage current; Lithium; Silicon; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.34431
  • Filename
    34431