Characterization, modeling and analysis of InAlAsSb Schottky barrier solar cells grown on InP

In this paper we present the first photovoltaic devices made from the promising quaternary InAlAsSb, grown lattice matched to InP by molecular beam epitaxy. Schottky barrier solar cells using semi-transparent contacts have been fabricated, characterized and simulated using a drift-diffusion model to extract information about the barrier height, minority carrier diffusion length and optical performance of devices fabricated from this material. We have compared the performance to analogous InAlAs devices, and present a wide range of optical and electrical characterization for the materials.