Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode

Author

Choi, C.H. ; Jeon, T.S. ; Clark, R. ; Kwong, D.L.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

24

Issue

4

fYear

2003

fDate

4/1/2003 12:00:00 AM

Firstpage

215

Lastpage

217

Abstract

High-quality, ultrathin chemical vapor deposition (CVD) hafnium oxynitride (HfOxNy) gate dielectric with poly-silicon (Si) gate electrode has been investigated for the first time. This CVD HfOxNy gate dielectric film remains amorphous after 950 /spl deg/C N/sub 2/ annealing. Compared with HfO/sub 2/ films with poly-Si gate electrode and similar equivalent oxide thickness (EOT), CVD HfOxNy shows significantly reduction in leakage-current density and boron penetration and superior thermal and electrical stability.

Keywords

CVD coatings; annealing; dielectric thin films; hafnium compounds; leakage currents; thermal stability; 950 degC; HfO/sub x/N/sub y/ gate dielectric; HfON; Si; annealing; boron penetration; chemical vapor deposition; electrical properties; equivalent oxide thickness; high-/spl kappa/ material; leakage current density; polysilicon gate electrode; thermal stability; ultrathin film; Amorphous materials; Chemical vapor deposition; Crystallization; Dielectric materials; Dielectric substrates; Electrodes; Grain boundaries; Hafnium oxide; Temperature; Thermal stability;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.810881

Filename

1206842