Title :
An IC-compatible detector process
Author_Institution :
Lawrence Berkeley Lab., California Univ., Berkeley, CA, USA
fDate :
2/1/1989 12:00:00 AM
Abstract :
A silicon radiation detector fabrication process which exploits the excellent gettering properties of a backside layer of phosphorous-doped polysilicon has been developed and characterized. p-i-n diodes 2 mm in diameter have been fabricated with typical reverse-bias current densities of approximately 1 nA/cm2. In addition, a strip detector with 128 strips of 6-mm length on a 55-μm pitch has been successfully fabricated with better than 10% uniformity in the diode reverse-bias currents. The process is compatible with conventional integrated-circuit fabrication technologies, and p-channel enhancement- and depletion-mode MOSFET (metal oxide semiconductor field effect transistors) with associated interdevice isolation have been fabricated simultaneously on detector-grade silicon with p-i-n radiation detectors
Keywords :
elemental semiconductors; integrated circuit technology; monolithic integrated circuits; p-i-n diodes; semiconductor counters; semiconductor technology; silicon; IC-compatible detector process; Si detector; Si strip detector; Si:P; depletion-mode MOSFET; fabrication; gettering properties; p-channel enhancement MOSFET; p-i-n diodes; p-i-n radiation detectors; reverse-bias current densities; Current density; Fabrication; Gettering; Isolation technology; MOSFET circuits; P-i-n diodes; Radiation detectors; Semiconductor diodes; Silicon radiation detectors; Strips;
Journal_Title :
Nuclear Science, IEEE Transactions on
