An IC-compatible detector process

Author

Holland, S.

Author_Institution

Lawrence Berkeley Lab., California Univ., Berkeley, CA, USA

Volume

36

Issue

1

fYear

1989

fDate

2/1/1989 12:00:00 AM

Firstpage

283

Lastpage

289

Abstract

A silicon radiation detector fabrication process which exploits the excellent gettering properties of a backside layer of phosphorous-doped polysilicon has been developed and characterized. p-i-n diodes 2 mm in diameter have been fabricated with typical reverse-bias current densities of approximately 1 nA/cm². In addition, a strip detector with 128 strips of 6-mm length on a 55-μm pitch has been successfully fabricated with better than 10% uniformity in the diode reverse-bias currents. The process is compatible with conventional integrated-circuit fabrication technologies, and p-channel enhancement- and depletion-mode MOSFET (metal oxide semiconductor field effect transistors) with associated interdevice isolation have been fabricated simultaneously on detector-grade silicon with p-i-n radiation detectors

Keywords

elemental semiconductors; integrated circuit technology; monolithic integrated circuits; p-i-n diodes; semiconductor counters; semiconductor technology; silicon; IC-compatible detector process; Si detector; Si strip detector; Si:P; depletion-mode MOSFET; fabrication; gettering properties; p-channel enhancement MOSFET; p-i-n diodes; p-i-n radiation detectors; reverse-bias current densities; Current density; Fabrication; Gettering; Isolation technology; MOSFET circuits; P-i-n diodes; Radiation detectors; Semiconductor diodes; Silicon radiation detectors; Strips;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.34450

Filename

34450