Title :
Electrical characterization of germanium p-channel MOSFETs
Author :
Shang, H. ; Okorn-Schimdt, H. ; Ott, J. ; Kozlowski, P. ; Steen, S. ; Jones, E.C. ; Wong, H.-S.P. ; Hanesch, W.
Author_Institution :
IBM Res. Div., T. J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
4/1/2003 12:00:00 AM
Abstract :
In this letter, we report germanium (Ge) p-channel MOSFETs with a thin gate stack of Ge oxynitride and low-temperature oxide (LTO) on bulk Ge substrate without a silicon (Si) cap layer. The fabricated devices show 2 /spl times/ higher transconductance and /spl sim/ 40% hole mobility enhancement over the Si control with a thermal SiO/sub 2/ gate dielectric, as well as the excellent subthreshold characteristics. For the first time, we demonstrate Ge MOSFETs with less than 100-mV/dec subthreshold slope.
Keywords :
MOSFET; dielectric thin films; elemental semiconductors; germanium; hole mobility; Ge; electrical characterization; hole mobility enhancement; low-temperature oxide; oxynitride; p-channel MOSFETs; subthreshold characteristics; thermal gate dielectric; thin gate stack; transconductance; Aluminum; Annealing; Dielectric devices; Dielectric substrates; Electron mobility; Germanium silicon alloys; MOSFETs; Nitrogen; Scattering; Silicon germanium;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.810879
