A silicon drift photodiode

Author

Avset, B.S. ; Ellison, J.A. ; Evensen, L. ; Hall, G. ; Hansen, T.E. ; Roe, S. ; Wheadon, R.

Author_Institution

Center for Industiforskning, Oslo, Norway

Volume

36

Issue

1

fYear

1989

fDate

2/1/1989 12:00:00 AM

Firstpage

295

Lastpage

299

Abstract

A low-capacitance photodiode based on the principle of the solid-state drift chamber has been constructed and tested. The device is based on a cellular design with an anode at the center of each of five cells, allowing electrons liberated by ionization to drift up to 1 mm to the readout strip. Two designs were produced with p⁺ implant widths of 75 μm and 85 μm, respectively, using n-type material of 3.5-kΩ-cm resistivity. The opposite surface is a uniform p-type implant, features matching those of the other surface, and is unmetallized to ensure good photosensitivity. Results on the performance of the detector, including leakage current, capacitance, and drift properties, are presented and compared with simulation results

Keywords

capacitance measurement; leakage currents; photodiodes; semiconductor counters; 75 mum; 85 mum; Si drift photodiode; capacitance; drift properties; leakage current; low-capacitance photodiode; photosensitivity; Anodes; Biological materials; Electrons; Implants; Ionization; Photodiodes; Silicon; Solid state circuits; Strips; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.34452

Filename

34452