Title :
Electric field effect on carrier escape from InAs/GaAs quantum dots solar cells
Author :
Yushuai Dai ; Polly, Stephen ; Hellstroem, Staffan ; Forbes, David V. ; Hubbard, Seth M.
Author_Institution :
NanoPower Res. Lab., Rochester Inst. of Technol., Rochester, NY, USA
Abstract :
The effects of electric field on carrier escape in InAs/GaAs quantum dots embedded in p-i-n solar cell structures have been studied by quantum efficiency. Via band structure simulation, effective barrier height of carriers inside QDs is reduced with increasing local electric field, so tunneling and thermal escape are enhanced. At 300K, when electric field intensity is below 40kV/cm, thermal escape is dominant in all confined state in QDs; when electric field intensity is above 40kV/cm, tunneling is dominant in shallow confined states and thermal escape is dominant in ground state of QDs.
Keywords :
III-V semiconductors; band structure; electric field effects; gallium arsenide; indium compounds; semiconductor quantum dots; solar cells; tunnelling; InAs-GaAs; QD; band structure simulation; carrier escape; effective barrier height; electric field effect; p-i-n solar cell structure; quantum dot solar cell; temperature 300 K; thermal escape enhancement; tunneling; Gallium arsenide; Indexes; Periodic structures; Q measurement; Stationary state; InAs/GaAs quantum dots; carrier escape; electric field; photovoltaic cells;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6925685
