Electric field effect on carrier escape from InAs/GaAs quantum dots solar cells

Author

Yushuai Dai ; Polly, Stephen ; Hellstroem, Staffan ; Forbes, David V. ; Hubbard, Seth M.

Author_Institution

NanoPower Res. Lab., Rochester Inst. of Technol., Rochester, NY, USA

fYear

2014

fDate

8-13 June 2014

Firstpage

3492

Lastpage

3497

Abstract

The effects of electric field on carrier escape in InAs/GaAs quantum dots embedded in p-i-n solar cell structures have been studied by quantum efficiency. Via band structure simulation, effective barrier height of carriers inside QDs is reduced with increasing local electric field, so tunneling and thermal escape are enhanced. At 300K, when electric field intensity is below 40kV/cm, thermal escape is dominant in all confined state in QDs; when electric field intensity is above 40kV/cm, tunneling is dominant in shallow confined states and thermal escape is dominant in ground state of QDs.

Keywords

III-V semiconductors; band structure; electric field effects; gallium arsenide; indium compounds; semiconductor quantum dots; solar cells; tunnelling; InAs-GaAs; QD; band structure simulation; carrier escape; effective barrier height; electric field effect; p-i-n solar cell structure; quantum dot solar cell; temperature 300 K; thermal escape enhancement; tunneling; Gallium arsenide; Indexes; Periodic structures; Q measurement; Stationary state; InAs/GaAs quantum dots; carrier escape; electric field; photovoltaic cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/PVSC.2014.6925685

Filename

6925685