Title :
Correcting effective mobility measurements for the presence of significant gate leakage current
Author :
Zeitzoff, Peter M. ; Young, Chadwin D. ; Brown, George A. ; Kim, Yudong
Author_Institution :
Int. SEMATECH, Austin, TX, USA
fDate :
4/1/2003 12:00:00 AM
Abstract :
A physically based correction for the impact of gate leakage current on the extraction of the effective mobility in MOSFETs has been derived that allows accurate determination of the mobility even when the gate leakage becomes significant. Experimentally, this correction has been applied to MOSFETs with both thin silicon dioxide and high-k gate dielectric, and the efficacy of the correction has been demonstrated for gate leakage up to 10 A/cm/sup 2/.
Keywords :
MOSFET; carrier mobility; dielectric thin films; leakage currents; semiconductor device measurement; MOSFETs; NMOSFET; PMOSFET; Si-SiO/sub 2/; effective mobility measurements; gate leakage current; high-k gate dielectric; inversion charge density; physically based correction; ultrathin gate oxide; Charge measurement; Current measurement; Degradation; Dielectric materials; Electrons; Gate leakage; Leakage current; MOSFET circuits; Silicon compounds; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.812140
