Title :
DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)
Author :
Chen, Chun-Yuan ; Cheng, Shiou-Ying ; Chiou, Wen-Hui ; Chuang, Hung-Ming ; Liu, Rong-Chau ; Yen, Chih-Hung ; Chen, Jing-Yuh ; Cheng, Chin-Chuan ; Liu, Wen-Chau
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Taiwan, Taiwan
fDate :
4/1/2003 12:00:00 AM
Abstract :
The dc performances of a novel InP-InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10-12 to 10-1 A). A current gain of 3 is obtained even operated at an ultralow collector current of 3.9×10-12 A (1.56 ×10-7 A/cm2). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5 V, respectively. Furthermore, a very low collector-emitter offset voltage of 40 mV is found. The temperature-dependent dc characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; low-power electronics; semiconductor device breakdown; tunnel transistors; 10-12 to 10-1 A; 40 mV; DC characterization; InP-InGaAs; TEBT; collector current regime; collector-emitter offset voltage; common-base breakdown voltages; common-emitter breakdown voltages; current gain; de performances; low-power electronics; temperature-dependent dc characteristics; tunneling emitter bipolar transistor; ultralow collector current; Bipolar transistors; Electrons; FETs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low power electronics; Low voltage; PHEMTs; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.812107
