• DocumentCode
    1223431
  • Title

    DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)

  • Author

    Chen, Chun-Yuan ; Cheng, Shiou-Ying ; Chiou, Wen-Hui ; Chuang, Hung-Ming ; Liu, Rong-Chau ; Yen, Chih-Hung ; Chen, Jing-Yuh ; Cheng, Chin-Chuan ; Liu, Wen-Chau

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Taiwan, Taiwan
  • Volume
    50
  • Issue
    4
  • fYear
    2003
  • fDate
    4/1/2003 12:00:00 AM
  • Firstpage
    874
  • Lastpage
    879
  • Abstract
    The dc performances of a novel InP-InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10-12 to 10-1 A). A current gain of 3 is obtained even operated at an ultralow collector current of 3.9×10-12 A (1.56 ×10-7 A/cm2). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5 V, respectively. Furthermore, a very low collector-emitter offset voltage of 40 mV is found. The temperature-dependent dc characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.
  • Keywords
    III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; low-power electronics; semiconductor device breakdown; tunnel transistors; 10-12 to 10-1 A; 40 mV; DC characterization; InP-InGaAs; TEBT; collector current regime; collector-emitter offset voltage; common-base breakdown voltages; common-emitter breakdown voltages; current gain; de performances; low-power electronics; temperature-dependent dc characteristics; tunneling emitter bipolar transistor; ultralow collector current; Bipolar transistors; Electrons; FETs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low power electronics; Low voltage; PHEMTs; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2003.812107
  • Filename
    1206865