DocumentCode
1223506
Title
Silicon planar technology for single-photon optical detectors
Author
Sciacca, Emilio ; Giudice, Andrea C. ; Sanfilippo, Delfo ; Zappa, Franco ; Lombardo, Salvatore ; Consentino, Rosario ; Di Franco, Cinzia ; Ghioni, Massimo ; Fallica, Giorgio ; Bonanno, Giovanni ; Cova, Sergio ; Rimini, Emanuele
Author_Institution
Dept. of Phys., Univ. of Catania, Italy
Volume
50
Issue
4
fYear
2003
fDate
4/1/2003 12:00:00 AM
Firstpage
918
Lastpage
925
Abstract
Design and fabrication of single photon avalanche detector (SPAD) in planar technology is reported. Device design and critical issues in the technology are discussed. Experimental test procedures are described for dark-counting rate, afterpulsing probability, photon timing resolution, and quantum detection efficiency. Low-noise detectors are obtained, with dark counting rates down to 10 c/s for devices with 10 μm diameter, down to 1 kc/s for 50 μm diameter. The technology is suitable for monolithic integration of SPAD detectors and associated circuits.
Keywords
avalanche photodiodes; elemental semiconductors; photon counting; semiconductor device testing; silicon; 10 micron; 50 micron; SPAD; Si; afterpulsing probability; dark-counting rate; low-noise detectors; photon timing resolution; quantum detection efficiency; silicon planar technology; single photon avalanche detector; single-photon optical detectors; test procedures; CMOS technology; Cathodes; Circuit testing; Fabrication; Optical detectors; Photonics; Physics; Silicon; Solid state circuits; Timing;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2003.812095
Filename
1206872
Link To Document