Static characteristics of a-Si:H dual-gate TFTs

Author

Servati, Peyman ; Karim, Karim S. ; Nathan, Arokia

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of Waterloo, Ont., Canada

Volume

50

Issue

4

fYear

2003

fDate

4/1/2003 12:00:00 AM

Firstpage

926

Lastpage

932

Abstract

This paper examines the effect of the top gate on the static characteristics of dual-gate hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs). Both forward and reverse regimes of operation are considered. The top gate has a distinct effect on the threshold voltage, subthreshold slope, drive-current capability, and the leakage current of the TFT. In particular, the threshold voltage is found to linearly decrease with increasing top-gate bias. Specific bias configurations of the dual gate TFT critical to vertical integration of on-pixel electronics for imaging and display applications are also presented.

Keywords

amorphous semiconductors; characteristics measurement; elemental semiconductors; hydrogen; leakage currents; semiconductor device measurement; silicon; thin film transistors; Si:H; bias configurations; drive-current capability; dual-gate TFTs; forward regimes; leakage current; on-pixel electronics; reverse regimes; static characteristics; subthreshold slope; threshold voltage; top-gate bias; Apertures; Circuits; Electrodes; Flat panel displays; Organic light emitting diodes; Sensor arrays; Silicon; Thin film transistors; Threshold voltage; X-ray detectors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.812481

Filename

1206873