DocumentCode :
1223656
Title :
Monolithic preamplifier with bipolar SST for silicon strip readout
Author :
Ikeda, Hirokazu ; Ujiie, Norihiko ; Akazawa, Yukio
Author_Institution :
Nat. Lab. for High Energy Phys., Ibaraki, Japan
Volume :
36
Issue :
1
fYear :
1989
fDate :
2/1/1989 12:00:00 AM
Firstpage :
502
Lastpage :
506
Abstract :
An amplifier chain for a silicon strip detector was investigated for an actual TEG (test element group) design. Using a bipolar SST (super-self-aligned technology) process, a low-power preamplifier was fabricated with a wide bandwidth. The preamplifier shows high gain and low input impedance, owing to an internal gain stage in the feedback loop of the amplifier. A fast shaping amplifier gave an equivalent input noise of less than 100 electrons with an input capacitive load of 10 pF and a shaping time 10-20 ns
Keywords :
bipolar integrated circuits; nuclear electronics; preamplifiers; semiconductor counters; Si strip detectors; amplifier chain; bipolar SST; fast shaping amplifier; feedback loop; gain; input capacitive load; input impedance; low-power preamplifier; shaping time; super-self-aligned technology; test element group; Bandwidth; Detectors; Electrons; Feedback loop; Impedance; Noise shaping; Preamplifiers; Silicon; Strips; Testing;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.34490
Filename :
34490
Link To Document :
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