Design of a 1D and 3D monolithically integrated piezoresistive MEMS high-g accelerometer

Author

Kuells, R. ; Bruder, Matthias ; Nau, Siegfried ; Salk, Manfred ; Thoma, K. ; Hansch, Walter

Author_Institution

Ernst-Mach-Inst., Fraunhofer Inst. for High-Speed Dynamics, Freiburg, Germany

fYear

2014

fDate

25-26 Feb. 2014

Firstpage

1

Lastpage

4

Abstract

This paper reports on the design of a new monolithically integrated 3-axis high-g accelerometer. It is based on a 1D-sensor which exhibits a sensitivity of 0.65 μV/V/g and a resonant frequency of 1.5 MHz. Both figures are higher than for any piezoresistive high-g accelerometer in the literature or on the market and are due to an unconventional spring-mass-system geometry. The 3-axis accelerometer incorporates the 1D- design to form a single-crystal silicon 3D-sensor.

Keywords

accelerometers; elemental semiconductors; microsensors; piezoresistive devices; silicon; springs (mechanical); three-dimensional integrated circuits; 1D monolithically integrated piezoresistive MEMS high-g accelerometer; 1D sensor design; 3-axis accelerometer; 3D monolithically integrated piezoresistive MEMS high-g accelerometer; 3D single crystal silicon sensor; Si; frequency 1.5 MHz; spring mass system geometry; Acceleration; Accelerometers; Piezoresistance; Resonant frequency; Semiconductor device measurement; Sensitivity; Sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Inertial Sensors and Systems (ISISS), 2014 International Symposium on

Conference_Location

Laguna Beach, CA

Type

conf

DOI

10.1109/ISISS.2014.6782509

Filename

6782509