Accurate electrical characterization of forward AC behavior of real semiconductor diode: giant negative capacitance and nonlinear interfacial layer

Author

Wang, C.D. ; Zhu, C.Y. ; Zhang, G.Y. ; Shen, J. ; Li, L.

Author_Institution

Dept. of Appl. Phys., Tianjin Univ., China

Volume

50

Issue

4

fYear

2003

fDate

4/1/2003 12:00:00 AM

Firstpage

1145

Lastpage

1148

Abstract

We have developed a new method to analyze the forward ac behavior of a semiconductor diode that uses a series mode. This method can accurately measure the dependence of series resistance, junction capacitance, junction voltage, ideality factor, and interfacial layer on forward bias voltages. Giant negative capacitance (NC) of the junction and the interfacial layer with nonlinear resistance and capacitance are confirmed in GaN Schottky diodes.

Keywords

III-V semiconductors; Schottky diodes; capacitance; gallium compounds; semiconductor device measurement; GaN; GaN Schottky diode; electrical characteristics; forward AC bias; ideality factor; junction capacitance; junction voltage; measurement technique; negative capacitance; nonlinear capacitance; nonlinear interfacial layer; nonlinear resistance; semiconductor diode; series mode; series resistance; Capacitance measurement; Circuits; Electrical resistance measurement; Gallium nitride; Laboratories; P-n junctions; Physics; Schottky diodes; Semiconductor diodes; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.812480

Filename

1206906