Title :
1/f noise in Si0.8Ge0.2 pMOSFETs under Fowler-Nordheim stress
Author :
Song, Young-Joo ; Lim, Jung-Wook ; Mheen, Bongki ; Kim, Sang-Hoon ; Bae, Hyun-Chul ; Kang, Jin-Young ; Kim, Jeong-Hoon ; Song, Jong-In ; Park, Kyung-Wan ; Shim, Kyu-Hwan
Author_Institution :
Wireless Commun. Device Res. Dept., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fDate :
4/1/2003 12:00:00 AM
Abstract :
The 1/f noise in Si0.8Ge0.2 pMOSFETs was found to be lower than in all-silicon (Si) pMOSFETs, before and after Fowler-Nordheim (F-N) stress. The minimum noise in the Si0.8Ge0.2 pMOSFET occurred at the thinnest unconsumed Si-cap of approximately 2 nm, because of the reduced-oxide trap density (Not) near the Fermi level (EF) in the device. However, all samples in this study, including the Si control and the Si0.8Ge0.2 pMOSFETs with different unconsumed Si-cap thicknesses of 21-64 Å, revealed almost identical relative changes in 1/f noise due to the stress, despite the relatively wide range of initial noise values. This suggests identical relative changes in Not at the EF in the devices during F-N stress.
Keywords :
1/f noise; Ge-Si alloys; MOSFET; semiconductor device noise; semiconductor materials; 1/f noise; Fermi level; Fowler-Nordheim stress; Si cap; Si0.8Ge0.2; Si0.8Ge0.2 pMOSFET; oxide trap density; Electric breakdown; Electrons; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; MOSFETs; Resonant tunneling devices; Stress;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.812477
