DocumentCode
1224243
Title
Phase field modeling of domain structures in ferroelectric thin films
Author
Artemev, Andrei ; Slutsker, Julia ; Roytburd, Alexander L.
Author_Institution
Mech. & Aerosp. Eng., Ottawa, Carleton Univ., Ottawa, ON
Volume
55
Issue
5
fYear
2008
fDate
5/1/2008 12:00:00 AM
Firstpage
963
Lastpage
970
Abstract
Phase-field simulations were used to explore the effect of the characteristics of the Landau-Devonshire free energy and values of electrostatic and elastic interactions on the formation of different types of domain structures in ferroelectric thin films. Simulations were performed at different constant-applied electric fields and by using a cyclic continuously changing field. It is shown that the 180deg or 90deg domain structures can be produced depending on the relative strength of elastic interactions and the ratio of barrier heights that determine the energy of the 180deg and 90deg domain boundaries. It is shown that the applied field strength and the thickness of the dead layer can play a minor role in the transition between the 90deg and 180deg domain structures. It is also demonstrated that the poling history can affect the type of the domain structure.
Keywords
electric domain walls; ferroelectric thin films; Landau-Devonshire free energy; domain boundaries; domain structures; elastic interactions; electrostatic interactions; ferroelectric thin films; phase field modeling; Ceramics; Computer Simulation; Electromagnetic Fields; Membranes, Artificial; Models, Chemical; Radiation Dosage; Radiometry;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/TUFFC.2008.740
Filename
4524968
Link To Document