Title :
Phase field modeling of domain structures in ferroelectric thin films
Author :
Artemev, Andrei ; Slutsker, Julia ; Roytburd, Alexander L.
Author_Institution :
Mech. & Aerosp. Eng., Ottawa, Carleton Univ., Ottawa, ON
fDate :
5/1/2008 12:00:00 AM
Abstract :
Phase-field simulations were used to explore the effect of the characteristics of the Landau-Devonshire free energy and values of electrostatic and elastic interactions on the formation of different types of domain structures in ferroelectric thin films. Simulations were performed at different constant-applied electric fields and by using a cyclic continuously changing field. It is shown that the 180deg or 90deg domain structures can be produced depending on the relative strength of elastic interactions and the ratio of barrier heights that determine the energy of the 180deg and 90deg domain boundaries. It is shown that the applied field strength and the thickness of the dead layer can play a minor role in the transition between the 90deg and 180deg domain structures. It is also demonstrated that the poling history can affect the type of the domain structure.
Keywords :
electric domain walls; ferroelectric thin films; Landau-Devonshire free energy; domain boundaries; domain structures; elastic interactions; electrostatic interactions; ferroelectric thin films; phase field modeling; Ceramics; Computer Simulation; Electromagnetic Fields; Membranes, Artificial; Models, Chemical; Radiation Dosage; Radiometry;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2008.740