Title :
Dependence of ferroelectric and magnetic properties on measuring temperatures for polycrystalline BiFeO3 films
Author :
Naganuma, Hiroshi ; Inoue, Yosuke ; Okamura, Soichiro
Author_Institution :
Dept. of Appl. Phys., Tokyo Univ. of Sci., Tokyo
fDate :
5/1/2008 12:00:00 AM
Abstract :
A multiferroic BiFeO3 film was fabricated on a Pt/Ti/SiO2/Si(100) substrate by a chemical solution deposition (CSD) method, and this was followed by postdeposition annealing at 923 K for 10 min in air. X-ray diffraction analysis indicated the formation of the polycrystalline single phase of the BiFeO3 film. A high remanent polarization of 89 muC/cm2 was observed at 90 K together with a relatively low electric coercive field of 0.32 MV/cm, although the ferroelectric hysteresis loops could not be observed at room temperature due to a high leakage current density. The temperature dependence of the ferroelectric hysteresis loops indicated that these hysteresis loops lose their shape above 165 K, and the nominal remanent polarization drastically increased due to the leakage current. Magnetic measurements indicated that the saturation magnetization was less than 1 emu/cm3 at room temperature and increased to approximately 2 emu/cm3 at 100 K, although the spontaneous magnetization could not appear. The magnetization curves of polycrystalline BiFeO3 film were nonlinear at both temperatures, which is different with BiFeO3 single crystal.
Keywords :
X-ray diffraction; annealing; antiferromagnetic materials; bismuth compounds; current density; dielectric hysteresis; dielectric polarisation; ferroelectric thin films; leakage currents; liquid phase deposited coatings; magnetic thin films; multiferroics; spontaneous magnetisation; BiFeO3; Pt-Ti-SiO2-Si; X-ray diffraction; chemical solution deposition; electric coercive field; ferroelectric hysteresis loops; ferroelectric properties; leakage current density; magnetic properties; multiferroic films; nominal remanent polarization; polycrystalline single phase; postdeposition annealing; room temperature; saturation magnetization; spontaneous magnetization; temperature 293 K to 298 K; temperature 90 K; temperature 923 K; temperature dependence; time 10 min; Bismuth; Crystallization; Electric Conductivity; Ferric Compounds; Magnetics; Materials Testing; Membranes, Artificial; Temperature;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2008.754