DocumentCode :
1224417
Title :
Effect of electric field and temperature on hole mobility in Alq3 material
Author :
Singh, S.P. ; Gupta, VL
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India
Volume :
39
Issue :
11
fYear :
2003
fDate :
5/29/2003 12:00:00 AM
Firstpage :
862
Lastpage :
863
Abstract :
The current-voltage characteristics of an Alq3-based hole-only device (ITO/Alq3/Au) are measured against temperature. As the hole current is space-charge limited, the hole mobility μp against electric field and temperature was measured directly. The hole mobility exhibits a field dependence as observed for other disordered materials such as amorphous glasses.
Keywords :
current density; electric field effects; electroluminescence; hole mobility; organic light emitting diodes; organic semiconductors; semiconductor thin films; space-charge-limited conduction; 8-hydroxyquinoline aluminium; Alq3-based hole-only device; Au; I-V characteristics; ITO; ITO/Alq3/Au structure; InSnO; OLEDs; current voltage characteristics; electric field effect; field dependent mobility; hole mobility; organic LED; organic heterojunction; space-charge limited hole current; temperature;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20030520
Filename :
1207239
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1224417
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