DocumentCode :
1224426
Title :
High power broadband InGaAs/GaAs quantum dot superluminescent diodes
Author :
Heo, Du Chang ; Song, Jin Dong ; Choi, Won Jun ; Lee, Jung Il ; Jung, Ji Chai ; Han, Il Ki
Author_Institution :
Nano Devices Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea
Volume :
39
Issue :
11
fYear :
2003
fDate :
5/29/2003 12:00:00 AM
Firstpage :
863
Lastpage :
865
Abstract :
The characteristics of superluminescent diodes (SLDs) using an InGaAs quantum dot is presented. An In0.5Ga0.5As quantum dot is formed by a short period superlattice of InAs and GaAs. The output power and the spectral width of the SLD are 0.9 W and 80 nm, respectively, covering the range 980-1060 nm.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor quantum dots; semiconductor superlattices; superluminescent diodes; 0.9 W; 980 to 1060 nm; In0.5Ga0.5As-GaAs; InGaAs quantum dot; InGaAs/GaAs superluminescent diodes; broadband superluminescent diodes; high power superluminescent diodes; output power; short period superlattice; spectral width;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20030519
Filename :
1207240
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1224426
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