• DocumentCode
    1224426
  • Title

    High power broadband InGaAs/GaAs quantum dot superluminescent diodes

  • Author

    Heo, Du Chang ; Song, Jin Dong ; Choi, Won Jun ; Lee, Jung Il ; Jung, Ji Chai ; Han, Il Ki

  • Author_Institution
    Nano Devices Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea
  • Volume
    39
  • Issue
    11
  • fYear
    2003
  • fDate
    5/29/2003 12:00:00 AM
  • Firstpage
    863
  • Lastpage
    865
  • Abstract
    The characteristics of superluminescent diodes (SLDs) using an InGaAs quantum dot is presented. An In0.5Ga0.5As quantum dot is formed by a short period superlattice of InAs and GaAs. The output power and the spectral width of the SLD are 0.9 W and 80 nm, respectively, covering the range 980-1060 nm.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor quantum dots; semiconductor superlattices; superluminescent diodes; 0.9 W; 980 to 1060 nm; In0.5Ga0.5As-GaAs; InGaAs quantum dot; InGaAs/GaAs superluminescent diodes; broadband superluminescent diodes; high power superluminescent diodes; output power; short period superlattice; spectral width;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030519
  • Filename
    1207240
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1224426