Title :
Sintering conditions of cordierite for microwave/millimeterwave dielectrics
Author :
Ohsato, Hitoshi ; Terada, Mio ; Kagomiya, Isao ; Kawamura, Keizou ; Kakimoto, Ken-ichi ; Kim, Eung Soo
Author_Institution :
Shikumi-Coll., Nagoya Inst. of Technol., Nagoya
fDate :
5/1/2008 12:00:00 AM
Abstract :
With the advent of ubiquitous age, the high- quality, dielectric materials have been required for the applications of wireless communications available to millimeterwave as well as microwave frequencies such as ultra-high speed local area network (LAN), electronic toll collection (ETS), and car anticollision systems on the intelligent transport system (ITS), and so on. Cordierite (Mg2Al4SiO18), which is one of the silicates, is a good candidate for mi- crowave/millimeterwave dielectrics due to low dielectric constant epsivr and low loss. This study is focused on optimization of the sintering condition of cordierite. A single phase of cordierite could be obtained from the powders calcined from 1355degC to 1375degC for 3 hours, and the samples sintered from 1375degC to 1440degC for 2 hours. The highest relative density of 98.7% was obtained for the samples sintered at 1440degC for 2 hours. The dielectric constant and the quality factor of cordierite depend on the sintering temperatures. The density also was improved to 2.51 g/cm3 by a slower heating and cooling rate of 3degC/minute. The microwave dielectric properties are as follows: epsivr = 6.14, Q ldr f = 59682 GHz, and tauf = -26.1 ppm/degC.
Keywords :
aluminium compounds; dielectric losses; dielectric materials; magnesium compounds; microwave materials; permittivity; sintering; Mg2Al4Si5O18; cordierite; dielectric constant; dielectric loss; dielectric materials; microwave-millimeterwave dielectrics; silicates; sintering temperatures; temperature 1355 C to 1375 C; temperature 1375 C to 1440 C; time 2 hr; time 3 hr; Ceramics; Crystallization; Electric Impedance; Heat; Materials Testing; Microwaves;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2008.760