Title :
Investigations of low-frequency noise of GaN-based heterostructure field-effect transistors
Author :
Wei, S.C. ; Su, Y.K. ; Kuan, T.M. ; Wang, R.-L. ; Chang, S.J. ; Ko, C.H. ; Webb, J.B. ; Bardwell, J.A.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan City, Taiwan
fDate :
5/29/2003 12:00:00 AM
Abstract :
The low-frequency noise of AlGaN/GaN heterojunction field-effect transistors (HFETs) with different Al fraction of the AlGaN layer was measured and characterised. The DC characteristics of AlGaN/GaN HFETs with higher Al fraction is better. However, the noise performance is poorer owing to the large lattice mismatch with higher Al fraction in the AlGaN layer. The pure flicker noise and lower noise power density can be obtained by the smaller Al fraction in the AlGaN layer of AlGaN/GaN HFETs.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; flicker noise; gallium compounds; semiconductor device noise; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN; DC characteristics; heterostructure field-effect transistors; lattice mismatch; low-frequency noise; noise performance; noise power density; pure flicker noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030548
