• DocumentCode
    1224628
  • Title

    Continuous-Wave Electrically Pumped 1.55- \\mu m Edge-Emitting Platelet Ridge Laser Diodes on Silicon

  • Author

    Rumpler, Joseph J. ; Fonstad, Clifton G., Jr.

  • Author_Institution
    Massachusetts Inst. of Technol., Cambridge, MA
  • Volume
    21
  • Issue
    13
  • fYear
    2009
  • fDate
    7/1/2009 12:00:00 AM
  • Firstpage
    827
  • Lastpage
    829
  • Abstract
    We report the successful integration on silicon of small footprint, low-threshold electrically pumped edge-emitting lasers by a new approach incorporating microcleaving technology to produce 6-mum-thick platelet lasers with cleaved facets, microscale pick and place assembly to position them on the substrate, and diaphragm pressure solder bonding to attach/connect them permanently in place. InP-based ridge-waveguide platelet lasers integrated on silicon lase at 1550-nm continuous-wave to 55degC (pulsed to 80degC) with output powers as high as 26.8 mW, external differential quantum efficiencies as high as 81%, and threshold currents as low as 18 mA.
  • Keywords
    III-V semiconductors; elemental semiconductors; indium compounds; integrated optics; laser beams; optical fabrication; ridge waveguides; semiconductor lasers; silicon; waveguide lasers; InP; Si; cleaved facets; continuous wave electrically pumped edge-emitting laser; current 18 mA; diaphragm pressure solder bonding; differential quantum efficiency; efficiency 81 percent; microcleaving technology; power 26.8 mW; ridge-waveguide platelet laser diodes; silicon base; size 6 mum; wavelength 1550 nm; Fabrication; indium compounds; integrated optoelectronics; laser cavity resonators; ridge waveguides; semiconductor lasers; silicon;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2009.2019261
  • Filename
    4810146