• DocumentCode
    1224842
  • Title

    Microwave characterisation and modelling of silicon carbide power MESFETS: towards a nonlinear model

  • Author

    Royet, AS ; Cabon, B. ; Ouisse, T. ; Brylinsky, C. ; Noblanc, O. ; Dua, C.

  • Author_Institution
    UMR CNRS, Grenoble, France
  • Volume
    150
  • Issue
    2
  • fYear
    2003
  • fDate
    4/10/2003 12:00:00 AM
  • Firstpage
    85
  • Lastpage
    89
  • Abstract
    SiC power MESFETs are studied for applications to power amplification in the microwave domain. A small-signal model is explained. It provides the intrinsic bias-dependent parameters of the devices, such as Gm, Cgs, Cds, Cgd, and the current gain cut-off frequency fT. It is shown that fT and Gm decrease with the drain to source bias VDS, because of self-heating effects. The model also includes temperature dependence and is in good agreement with experiments. This is a first step to non-linear modelling of SiC MESFETs.
  • Keywords
    microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; current gain cut-off frequency; microwave characteristics; nonlinear model; self-heating effect; silicon carbide power MESFET; small-signal model; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Microwaves, Antennas and Propagation, IEE Proceedings
  • Publisher
    iet
  • ISSN
    1350-2417
  • Type

    jour

  • DOI
    10.1049/ip-map:20030305
  • Filename
    1207330
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1224842