DocumentCode :
1224914
Title :
An Empirical Comparison of Spatial Randomness Models for Yield Analysis
Author :
Fellows, H.H. ; Mastrangelo, Christina M. ; White, K. Preston, Jr.
Author_Institution :
Appl. Phys. Lab., Johns Hopkins Univ., Laurel, MD
Volume :
32
Issue :
2
fYear :
2009
fDate :
4/1/2009 12:00:00 AM
Firstpage :
115
Lastpage :
120
Abstract :
Yield analysis is an important activity in the assessment and control of semiconductor fabrication processes. Tests of spatial randomness provide a means of enhancing yield analysis by considering the patterns of good and defective chips on the wafer. These patterns can be related to the likely sources of defects during production. This paper compares two approaches for determining spatial randomness based on join-count statistics. The first assumes that a random distribution of defects can be modeled as a spatially homogenous Bernoulli process (SHBP). The second uses a Markov random field (MRF) as the null distribution. While both methods are shown to have good performance, the MRF outperforms the SHBP on both clustered and random defect data.
Keywords :
Markov processes; random processes; semiconductor device manufacture; semiconductor device models; semiconductor device testing; Markov random field; defect model; join-count statistics; null distribution; random distribution; semiconductor fabrication process control; spatial randomness model; spatially homogenous Bernoulli process; yield analysis; Data analysis; Decision making; Fabrication; Markov random fields; Pattern analysis; Production; Semiconductor device modeling; Statistical analysis; Statistical distributions; Testing; Defect analysis; Markov random field (MRF); spatial statistics; spatially homogeneous Bernoulli process (SHBP);
fLanguage :
English
Journal_Title :
Electronics Packaging Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
1521-334X
Type :
jour
DOI :
10.1109/TEPM.2009.2015768
Filename :
4810174
Link To Document :
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