Title :
Room-Temperature Operation of Buffer-Free GaSb–AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 μm
Author :
Mehta, M. ; Jallipalli, A. ; Tatebayashi, J. ; Kutty, M.N. ; Albrecht, A. ; Balakrishnan, G. ; Dawson, L.R. ; Huffaker, D.L.
Author_Institution :
Univ. of New Mexico, Albuquerque
Abstract :
Buffer-free growth of GaSb on GaAs using interfacial misfit (IMF) layers may significantly improve the performance of antimonide-based emitters operating between 1.6 and 3 mum by integrating III-As and III-Sb materials. Using the IMF, we are able to demonstrate a GaSb-AlGaSb quantum-well laser grown on a GaAs substrate and emitting at 1.65 mum, the longest known operating wavelength for this type of device. The device operates in the pulsed mode at room temperature and shows 15-mW peak power at -10degC and shows high characteristic temperature (To) for an Sb-based active region. Further improvements to IMF formation can lead to high-performance lasers operating up to 3 mum.
Keywords :
III-V semiconductors; aluminium compounds; dislocations; gallium compounds; quantum well lasers; antimonide-based emitters; buffer-free quantum-well diode lasers; interfacial misfit layers; operating wavelength; pulsed mode; room-temperature operation; temperature -10 degC; temperature 293 K to 298 K; wavelength 1.65 mum to 3 mum; Diode lasers; Fiber lasers; Gallium arsenide; Gas lasers; Optical materials; Quantum well lasers; Semiconductor lasers; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers; GaAs; GaSb; interfacial misfits (IMFs); semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.904928
