DocumentCode :
12250
Title :
A Comparative Performance Study of an Interleaved Boost Converter Using Commercial Si and SiC Diodes for PV Applications
Author :
Ho, Carl Ngai-Man ; Breuninger, Hannes ; Pettersson, Sami ; Escobar, Gerardo ; Canales, Francisco
Author_Institution :
ABB Corp. Res. Ltd., Baden-Dattwil, Switzerland
Volume :
28
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
289
Lastpage :
299
Abstract :
A performance comparison of an interleaved boost converter (IBC) using Si and SiC diodes for photovoltaic (PV) energy conversion systems is presented in this paper. The performance attributes under investigation include the semiconductor device behavior, thermal requirement, system efficiency, and power density. The IBC is designed to sustain the dc-link voltage in the energy conversion system and to provide the maximum power point tracking in the PV system. Due to the absence of reverse recovery current in SiC Schottky diodes, low switching losses are generated in diodes and switches. This benefit results in a higher system efficiency and smaller cooling system design requirement. As a benefit, the volume and weight of the heatsink can be further reduced. Furthermore, behaviors of the power semiconductors, which will impact the performance in the system, are discussed in the paper. The validity of the analysis is confirmed experimentally with a 2.5-kW IBC prototype with relatively wide power and input voltage operating range. The overall performance of the IBC prototype using Si and SiC diodes is summarized in a table for easy comparison.
Keywords :
Schottky diodes; cooling; elemental semiconductors; maximum power point trackers; photovoltaic power systems; power convertors; power semiconductor diodes; silicon; silicon compounds; wide band gap semiconductors; IBC; PV energy conversion systems; Schottky diodes; Si; SiC; cooling system design; dc-link voltage; heat sink; interleaved boost converter; low switching losses; maximum power point tracking; photovoltaic energy conversion systems; power 2.5 kW; power density; power semiconductors; reverse recovery current; semiconductor device behavior; Inverters; Schottky diodes; Silicon; Silicon carbide; Switching frequency; Topology; Diode; MOSFET; SiC; interleaved boost converter (IBC); photovoltaic (PV); power semiconductor;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2012.2197830
Filename :
6198359
Link To Document :
بازگشت