Title :
A Planar Gunn Diode Operating Above 100 GHz
Author :
Khalid, A. ; Pilgrim, N.J. ; Dunn, G.M. ; Holland, M.C. ; Stanley, C.R. ; Thayne, I.G. ; Cumming, D.R.S.
Author_Institution :
Glasgow Univ., Glasgow
Abstract :
We show the experimental realization of a 108-GHz planar Gunn diode structure fabricated in GaAs/AlGaAs. There is a considerable interest in such devices since they lend themselves to integration into millimeter-wave and terahertz integrated circuits. The material used was grown by molecular beam epitaxy, and devices were made using electron beam lithography. Since the frequency of oscillation is defined by the lithographically controlled anode-cathode distance, the technology shows great promise in fabricating single chip terahertz sources.
Keywords :
Gunn diodes; electron beam lithography; gallium arsenide; millimetre wave integrated circuits; AlGaAs - System; electron beam lithography; frequency 108 GHz; lithographically controlled anode-cathode distance; millimeter-wave integrated circuit; molecular beam epitaxy; oscillation; planar Gunn diode; semiconductor device fabrication; single chip terahertz source; terahertz integrated circuit; Diodes; Electron beams; Frequency; Gallium arsenide; Gunn devices; Integrated circuit technology; Lithography; Millimeter wave integrated circuits; Millimeter wave technology; Molecular beam epitaxial growth; Gunn devices; semiconductor device fabrication; submillimeter wave diodes; terahertz;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.904218
