Title :
GaN-Based High-Q Vertical-Cavity Light-Emitting Diodes
Author :
Lu, Tien-Chang ; Kao, Tsung-Ting ; Kao, Chih-Chiang ; Chu, Jung-Tang ; Yeh, Kang-Fan ; Lin, Li-Fan ; Peng, Yu-Chun ; Huang, Hung-Wen ; Kuo, Hao-Chung ; Wang, Shing-Chung
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
Abstract :
We report a fabrication and demonstration of a GaN-based high-Q vertical-cavity light-emitting diode (VCLED). The GaN VCLED is composed of a 25-pair high-reflectivity (98%) GaN/AlN distributed Bragg reflector (DBR), an eight-pair SiO2/Ta2O5 dielectric DBR (99%), and a three-lambda optical thickness InGaN/GaN active region. It shows a very narrow linewidth of 0.52 nm, corresponding to a cavity Q -value of 895 at a driving current of 10 mA and a dominant emission peak wavelength at 465.3 nm. In addition, this VCLED emission linewidth continues to decrease with an increasing injection current, suggesting a possible realization of GaN-based vertical-cavity surface emitting lasers.
Keywords :
III-V semiconductors; aluminium compounds; dielectric materials; distributed Bragg reflectors; gallium compounds; laser cavity resonators; light emitting diodes; silicon compounds; surface emitting lasers; tantalum compounds; wide band gap semiconductors; GaN-AlN - Interface; GaN-based high-vertical-cavity light-emitting diodes; InGaN-GaN - Interface; SiO2-Ta2O5 - Interface; VCLED emission linewidth; current 10 mA; dielectric DBR; distributed Bragg reflector; injection current; optical thickness; vertical-cavity surface emitting lasers; wavelength 465.3 nm; Distributed Bragg reflectors; Etching; Gallium nitride; Light emitting diodes; Optical device fabrication; Optical pumping; Optical refraction; Optical variables control; Reflectivity; Vertical cavity surface emitting lasers; GaN; light-emitting diode (LED); vertical cavity; vertical-cavity LED (VCLED);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.904906
