Title :
Monolithically Integrated Logic nor Gate Based on GaAs/AlGaAs Three-Terminal Junctions
Author :
Müller, C.R. ; Worschech, L. ; Höpfner, P. ; Höfling, S. ; Forchel, A.
Author_Institution :
Univ. Wurzburg, Wurzburg
Abstract :
Room-temperature operation of a logic NOR gate is demonstrated. The NOR gate is based on three three-terminal junctions (TTJs) monolithically integrated in a modulation-doped GaAs/AlGaAs heterostructure without any external load resistance. For the logic NOR gate, one of the TTJs serves as load transistor, whereas the other two are used as inputs. Each TTJ has a 90-nm-wide channel and shows clear transistor characteristics with drain currents up to 10 muA for a drain voltage of 1 V. Furthermore, voltage amplification is demonstrated for the logic NOR-gate function.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; logic design; logic gates; GaAs-AlGaAs; GaAs-AlGaAs - Interface; external load resistance; integrated circuit; load transistor; modulation-doped heterostructure; monolithically integrated logic NOR gate; room-temperature operation; size 90 nm; three-terminal junctions; transistor characteristics; voltage 1 V; voltage amplification; Epitaxial layers; Gallium arsenide; Joining processes; Logic circuits; Logic devices; Logic gates; Molecular beam epitaxial growth; Scanning electron microscopy; Temperature; Voltage; Integrated circuit; logic nor gate; three-terminal junction (TTJs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.906108
