Title :
High-Performance and Low-Temperature-Compatible p-Channel Polycrystalline-Silicon TFTs Using Hafnium-Silicate Gate Dielectric
Author :
Yang, Ming-Jui ; Chien, Chao-Hsin ; Lu, Yi-Hsien ; Luo, Guang-Li ; Chiu, Su-Ching ; Lou, Chun-Che ; Huang, Tiao-Yuan
Abstract :
In this letter, high-performance p-channel polycrystalline-silicon thin-film transistors (TFTs) using hafnium- silicate (HfSiOx) gate dielectric are demonstrated with low- temperature processing. Because of the higher gate-capacitance density, TFTs with HfSiOx gate dielectric exhibit excellent device performance in terms of higher ION/IOFF current ratio, lower subthreshold swing, and lower threshold voltage (Vth) albeit with slightly higher OFF-state current. More importantly, the mobility of TFTs with HfSiOx gate dielectric is 1.7 times that of TFTs with conventional deposited-SiO2 gate dielectric.
Keywords :
cryogenic electronics; thin film transistors; HfSiO - Interface; SiO2 - Interface; hafnium-silicate gate dielectric; high-performance p-channel polycrystalline-silicon TFT; low-temperature-compatible p-channel polycrystalline-silicon TFT; subthreshold swing; threshold voltage; Amorphous silicon; Associate members; Chaos; Chemical vapor deposition; Dielectric substrates; Electrodes; Hafnium oxide; Laboratories; Leakage current; Thin film transistors; Hafnium silicate $(hbox{HfSiO}_{x})$; high dielectric constant (high-$kappa$); polycrystalline-silicon thin-film transistors (poly-Si TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.904901
