• DocumentCode
    1225236
  • Title

    A Program-Erasable High-κ Hf0.3N0.2O0.5 MIS Capacitor With Good Retention

  • Author

    Yang, H.J. ; Chin, Albert ; Chen, W.J. ; Cheng, C.F. ; Huang, W.L. ; Hsieh, I.J. ; McAlister, S.P.

  • Author_Institution
    Nat. Chiao-Tung Univ., Hsinchu
  • Volume
    28
  • Issue
    10
  • fYear
    2007
  • Firstpage
    913
  • Lastpage
    915
  • Abstract
    We describe a programmable-erasable MIS capacitor with a single high-k Hf0.3N0.2O0.5 dielectric layer. This device showed a capacitance density of ~6.6 fF/mum2, low program and erase voltages of +5 and -5 V, respectively, and a large DeltaVfb memory window of 1.5 V. In addition, the 25degC data retention was good, as indicated by program and erase decay rates of only 2 and 6.2 mV/dec, respectively. Such device retention is attributed to the deep trapping level of 1.05 eV in the Hf0.3N0.2O0.5.
  • Keywords
    MIS capacitors; HfNO - Interface; capacitance density; data retention; dielectric layer; programmable-erasable MIS capacitor; CMOS technology; Capacitors; Dielectric substrates; Hafnium; MIS devices; Materials science and technology; Nonvolatile memory; Random access memory; Rapid thermal annealing; Voltage; Capacitor; dynamic random access memory (DRAM); erase; high-$kappa$; nonvolatile memory (NVM); program;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2007.905375
  • Filename
    4317682
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1225236