DocumentCode
1225238
Title
High performance near-IR (765 nm) AlAs/ AlGaAs vertical cavity surface emitting lasers
Author
Gulden, K.H. ; Moser, M. ; Lüscher, S. ; Schweizer, H.P.
Author_Institution
Paul Scherrer Inst., Zurich, Switzerland
Volume
31
Issue
25
fYear
1995
fDate
12/7/1995 12:00:00 AM
Firstpage
2176
Lastpage
2178
Abstract
Near infrared (765 nm) AlAs/AlGaAs vertical-cavity surface emitting laser (VCSEL) diodes with minimum threshold currents of 0.6 mA and threshold voltages of 1.9 V are demonstrated. The peak output powers exceed 5 mW. These characteristics represent a significant improvement compared to previously published data for VCSELs operating in this wavelength range
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor lasers; surface emitting lasers; 0.6 mA; 1.9 V; 765 nm; AlAs-AlGaAs; VCSEL diodes; minimum threshold currents; near-IR vertical cavity surface emitting lasers; peak output powers; threshold voltages;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19951476
Filename
481030
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