Title :
High performance near-IR (765 nm) AlAs/ AlGaAs vertical cavity surface emitting lasers
Author :
Gulden, K.H. ; Moser, M. ; Lüscher, S. ; Schweizer, H.P.
Author_Institution :
Paul Scherrer Inst., Zurich, Switzerland
fDate :
12/7/1995 12:00:00 AM
Abstract :
Near infrared (765 nm) AlAs/AlGaAs vertical-cavity surface emitting laser (VCSEL) diodes with minimum threshold currents of 0.6 mA and threshold voltages of 1.9 V are demonstrated. The peak output powers exceed 5 mW. These characteristics represent a significant improvement compared to previously published data for VCSELs operating in this wavelength range
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor lasers; surface emitting lasers; 0.6 mA; 1.9 V; 765 nm; AlAs-AlGaAs; VCSEL diodes; minimum threshold currents; near-IR vertical cavity surface emitting lasers; peak output powers; threshold voltages;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951476
