Title :
High-performance 770-nm AlGaAs-GaAsP tensile-strained quantum-well laser diodes
Author :
Agahi, F. ; Kei May Lau ; Choi, H.K. ; Baliga, A. ; Anderson, N.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
Abstract :
Experimental results on tensile-strained Al/sub 0.3/Ga/sub 0.66/As-GaAs/sub 0.78/P/sub 0.22/ separate-confinement-heterostructure single-quantum-well (SCH-SQW) laser diodes are reported. Threshold current density as low as 260 A/cm2 for broad-stripe lasers with a cavity length of 1500 μm has been observed. Broad-stripe devices have operated cw at room temperature with output power as high as 620 mW/facet. Ridge-waveguide lasers have exhibited cw threshold currents as low as 13.5 mA and output power of 90 mW. The output of the tensile-strained lasers is TM polarized.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; gallium compounds; laser cavity resonators; quantum well lasers; waveguide lasers; 13.5 mA; 1500 mum; 770 nm; 90 mW; Al/sub 0.3/Ga/sub 0.66/As-GaAs/sub 0.78/P/sub 0.22/; AlGaAs-GaAsP; AlGaAs-GaAsP tensile-strained quantum-well laser diodes; TM polarized; broad-stripe lasers; cavity length; current density; cw; cw threshold currents; output power; ridge-waveguide lasers; room temperature; separate-confinement-heterostructure single-quantum-well laser diodes; threshold current; Diode lasers; Laboratories; Laser modes; Optical materials; Power generation; Power lasers; Quantum well lasers; Senior members; Temperature; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
