Title :
Very low power consumption semiconductor optical amplifier array
Author :
Kitamura, Shotaro ; Komatsu, Keiro ; Kitamura, Mitsuhiro
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
Very low power consuming and polarization insensitive semiconductor optical amplifier arrays with submicron-wide InGaAsP active layers are realized by selective MOVPE technique. 20-dB signal gain at a low injection current of 25 mA was achieved in four-channel arrays.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light polarisation; power consumption; semiconductor laser arrays; semiconductor lasers; 25 mA; InGaAsP; four-channel arrays; low injection current; polarization insensitive semiconductor optical amplifier arrays; selective MOVPE technique; submicron-wide InGaAsP active layers; very low power consumption semiconductor optical amplifier array; Energy consumption; Epitaxial growth; Epitaxial layers; Fabrication; Optical arrays; Optical films; Optical losses; Optical polarization; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
