Title :
Measurements of reverse and forward bias absorption and gain spectra in semiconductor laser material
Author :
McDougall, S.D. ; Ironside, C.N.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
12/7/1995 12:00:00 AM
Abstract :
A simple technique for measuring absorption and gain spectra under reverse and forward bias in a two section semiconductor laser is described. Results are presented for an AlGaAs/GaAs multiquantum well laser. For reverse bias, exciton broadening and shifting are observed; and for forward bias, relative gain spectra are measured
Keywords :
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; laser variables measurement; quantum well lasers; AlGaAs-GaAs; AlGaAs/GaAs multiquantum well laser; absorption spectra; exciton broadening; exciton shifting; forward bias; gain spectra; reverse bias; two section semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951483
