• DocumentCode
    1225269
  • Title

    CMOS Camera With In-Pixel Temporal Change Detection and ADC

  • Author

    Chi, Yu M. ; Mallik, Udayan ; Clapp, Matthew A. ; Choi, Edward ; Cauwenberghs, Gert ; Etienne-Cummings, Ralph

  • Author_Institution
    California-San Diego Univ., La Jolla
  • Volume
    42
  • Issue
    10
  • fYear
    2007
  • Firstpage
    2187
  • Lastpage
    2196
  • Abstract
    An array of 90times90 active pixel sensors (APS) with pixel-level embedded differencing and comparison is presented. The nMOS-only 6T 2C 25 mum times 25 mum pixel provides both analog readout of pixel intensity and a digital flag indicating temporal change at variable thresholds. Computation is performed through a pixel-level capacitively coupled comparator which also functions as analog-to-digital converter. The chip, fabricated in a 0.5 mum 3M2P CMOS, process consumes 4.2 mW of power while operating at 30 fps. Change sensitivity is 2.1% at an illumination of 1.7 W/cm2. Gating of raster-scanned pixel output by change detection typically produces a 20-fold compression in the data stream, depending on image conditions and reconstruction quality set by the change detection threshold.
  • Keywords
    CMOS image sensors; analogue-digital conversion; cameras; comparators (circuits); data compression; image reconstruction; ADC; CMOS camera; active pixel sensor; analog-to-digital converter; image condition; image reconstruction quality; in-pixel temporal change detection; size 0.5 mum; Analog-digital conversion; CMOS image sensors; CMOS process; Cameras; Image coding; Image reconstruction; Lighting; Pixel; Sensor arrays; Streaming media; CMOS image sensor; computation-on-readout (COR); delta-difference sampling (DDS); pixel-level analog-to-digital conversion (ADC); temporal difference imager;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2007.905295
  • Filename
    4317686