Title :
Ultrafast recovery time in a strained InGaAs-AlAs p-i-n modulator
Author :
Wang, H. ; LiKamWa, P. ; Ghisoni, M. ; Parry, G. ; Stavrinou, P.N. ; Roberts, C. ; Miller, A.
Author_Institution :
CREOL, Central Florida Univ., Orlando, FL, USA
Abstract :
We have performed sub-picosecond resolution measurements of the optical recovery of InGaAs-AlAs multiple quantum well p-i-n structures that exhibit strong excitonic features, a clear quantum confined Stark effect and low photocurrent. The recovery times, measured as a function of applied electrical bias and optical excitation density, are much shorter than that predicted by carrier thermionic emission rates from the quantum wells. An observed ultrafast recovery time of 28 ps makes this material system promising as a fast modulator with low thermal dissipation or as a saturable absorber for semiconductor and fiber laser mode locking.<>
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; excitons; gallium arsenide; high-speed optical techniques; indium compounds; optical saturable absorption; p-i-n photodiodes; quantum confined Stark effect; semiconductor quantum wells; 28 ps; InGaAs-AlAs; InGaAs-AlAs multiple quantum well p-i-n structure; applied electrical bias; carrier thermionic emission rates; clear quantum confined Stark effect; fast modulator; fiber laser mode locking; low photocurrent; low thermal dissipation; material system; observed ultrafast recovery time; optical excitation density; recovery time; saturable absorber; semiconductor laser mode locking; strained InGaAs-AlAs p-i-n modulator; strong excitonic features; sub-picosecond resolution measurements; ultrafast recovery time; Carrier confinement; Laser mode locking; Optical modulation; PIN photodiodes; Performance evaluation; Photoconductivity; Potential well; Stark effect; Stimulated emission; Ultrafast optics;
Journal_Title :
Photonics Technology Letters, IEEE
