Monolithic integration on InP of a Wannier Stark modulator with a strained MQW DFB 1.55-μm laser

Author

Allovon, Michel ; Fouchet, Sylvie ; Harmand, Jean-Christophe ; Ougazzaden, Abdallah ; Rose, Benoit ; Gloukhian, André ; Devaux, Fabrice

Author_Institution

Lab. de Bagneux, CNET, Paris, France

Volume

7

Issue

2

fYear

1995

Firstpage

185

Lastpage

187

Abstract

We present the technical approach and the preliminary device results on the first integration of a Wannier Stark (WS) electroabsorption (EA) modulator with a DFB laser on InP. The WS modulator active layer consists of a lattice matched InGaAs-InAlAs superlattice (SL) grown by solid source MBE. It is butt-coupled to a laser grown by AP-MOVPE whose active layer includes a strained InGaAsP-InGaAsP MQW stack. Device results cover static performances of integrated lasers and modulators, and measurements of high frequency characteristics (small signal bandwidth and 10 Gb/s eye diagram).<>

Keywords

III-V semiconductors; distributed feedback lasers; electro-optical modulation; electroabsorption; indium compounds; integrated optoelectronics; quantum confined Stark effect; quantum well lasers; semiconductor superlattices; 1.55 mum; 10 Gbit/s; AP-MOVPE; InGaAs-InAlAs; InGaAsP-InGaAsP; InP; WS modulator active layer; Wannier Stark modulator; active layer; butt-coupled; electroabsorption modulator; eye diagram; high frequency characteristics; integrated lasers; lattice matched InGaAs-InAlAs superlattice; monolithic integration; small signal bandwidth; solid source MBE; static performances; strained InGaAsP-InGaAsP MQW stack; strained MQW DFB 1.55-/spl mu/m laser; Bandwidth; Frequency measurement; Indium phosphide; Lattices; Monolithic integrated circuits; Performance evaluation; Quantum well devices; Signal analysis; Solids; Superlattices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.345917

Filename

345917