Title :
AlGaInP LEDs using reactive thermally evaporated transparent conducting indium tin oxide (ITO)
Author :
Aliyu, Y.H. ; Morgan, D.V. ; Thomas, H. ; Bland, S.W.
Author_Institution :
Sch. of Eng., Univ. of Wales Coll. of Cardiff, UK
fDate :
12/7/1995 12:00:00 AM
Abstract :
Reactive thermally evaporated transparent conducting indium tin oxide (ITO) layers are used as window material and for current spreading layers on AlGaInP light emitting diodes (LEDs). The sheet resistance of the ITO films deposited is of the order of 4.5 Ω/□ with up to 90% transmission in the visible region of the spectrum. In all cases, the devices incorporating the ITO layer gave a marginally greater output (10%) than the standard non-ITO devices
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; semiconductor materials; semiconductor thin films; transparency; vacuum deposited coatings; AlGaInP; ITO; InSnO; LEDs; current spreading layers; light emitting diodes; reactive thermally evaporated transparent conducting layers; sheet resistance; visible region; window material;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951520
