Title :
2.2 V operation power heterojunction FET for personal digital cellular telephones
Author :
Iwata, N. ; Inosako, K. ; Kuzuhara, M.
Author_Institution :
Kansai Electron. Res Lab., NEC Corp., Shiga, Japan
fDate :
12/7/1995 12:00:00 AM
Abstract :
The authors describe the 950 MHz power performance of a 2.2 V operation double-doped AlGaAs/lnGaAs/AlGaAs heterojunction FET(HJFET) for personal digital cellular telephones. The fabricated HJFET exhibited 600 mA/mm maximum drain current, 260 mS/mm transconductance and 9.4 V gate-to-drain breakdown voltage. A 21 mm gate-periphery device operating with a drain bias of 2.2 V, demonstrated 1.86 W (32.7 dBm) output power and 62.8% power-added efficiency with -50.5 dBc adjacent channel leakage power at 50 kHz off-centre frequency
Keywords :
UHF field effect transistors; aluminium compounds; cellular radio; cordless telephone systems; digital radio; gallium arsenide; indium compounds; power field effect transistors; 1.86 W; 2.2 V; 62.8 percent; 9.4 V; 950 MHz; AlGaAs-InGaAs-AlGaAs; adjacent channel leakage power; drain bias; drain current; gate-periphery device; gate-to-drain breakdown voltage; off-centre frequency; output power; personal digital cellular telephones; power heterojunction FET; power-added efficiency; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951488
