2.2 V operation power heterojunction FET for personal digital cellular telephones

Author

Iwata, N. ; Inosako, K. ; Kuzuhara, M.

Author_Institution

Kansai Electron. Res Lab., NEC Corp., Shiga, Japan

Volume

31

Issue

25

fYear

1995

fDate

12/7/1995 12:00:00 AM

Firstpage

2213

Lastpage

2215

Abstract

The authors describe the 950 MHz power performance of a 2.2 V operation double-doped AlGaAs/lnGaAs/AlGaAs heterojunction FET(HJFET) for personal digital cellular telephones. The fabricated HJFET exhibited 600 mA/mm maximum drain current, 260 mS/mm transconductance and 9.4 V gate-to-drain breakdown voltage. A 21 mm gate-periphery device operating with a drain bias of 2.2 V, demonstrated 1.86 W (32.7 dBm) output power and 62.8% power-added efficiency with -50.5 dBc adjacent channel leakage power at 50 kHz off-centre frequency

Keywords

UHF field effect transistors; aluminium compounds; cellular radio; cordless telephone systems; digital radio; gallium arsenide; indium compounds; power field effect transistors; 1.86 W; 2.2 V; 62.8 percent; 9.4 V; 950 MHz; AlGaAs-InGaAs-AlGaAs; adjacent channel leakage power; drain bias; drain current; gate-periphery device; gate-to-drain breakdown voltage; off-centre frequency; output power; personal digital cellular telephones; power heterojunction FET; power-added efficiency; transconductance;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19951488

Filename

481055