A 1.4 V Supply CMOS Fractional Bandgap Reference

Author

Perry, Raymond T. ; Lewis, Stephen H. ; Brokaw, A. Paul ; Viswanathan, T.R.

Author_Institution

Univ.of California, Davis

Volume

42

Issue

10

fYear

2007

Firstpage

2180

Lastpage

2186

Abstract

This paper describes a bandgap reference that outputs a fraction of the silicon bandgap voltage. To simplify the design of an internal operational amplifier, the reference drives the base voltages on substrate transistors through unity-gain buffers to a fraction of a diode drop. With a 1.4 V supply, the reference produces an output of about 858 mV, which varies by 1.28 mV from -20degC to 100degC. It dissipates 162 muW and occupies 1.2 mm² in 0.35 mum CMOS.

Keywords

CMOS integrated circuits; energy gap; reference circuits; CMOS fractional bandgap reference; diode drop; internal operational amplifier; power 162 muW; silicon bandgap voltage; size 0.35 mum; substrate transistors; temperature -20 degC to 100 degC; unity-gain buffers; voltage 1.28 mV; voltage 1.4 V; voltage 858 mV; Analog circuits; Analog integrated circuits; CMOS analog integrated circuits; CMOS technology; Diodes; Land surface temperature; Operational amplifiers; Photonic band gap; Silicon; Voltage; Analog circuits; CMOS analog integrated circuits; analog integrated circuits; reference circuits; temperature;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2007.905236

Filename

4317710