Title :
Enhanced mobility piezoelectric AlInAs/InGaAs quantum well structures on (111)B InP substrates [HEMTs]
Author :
Hitchens, L.J. ; Houston, P.A. ; Hopkinson, M. ; Rees, G.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
fDate :
12/7/1995 12:00:00 AM
Abstract :
Self-consistent Poisson/Schrodinger calculations were used for designing strained AlInAs/InGaAs modulation doped quantum wells which were then grown by molecular beam epitaxy on (111)B oriented InP substrates. Compressive-strained wells (65% In) and tensile-strained wells (47% In) gave 300 K mobilities of 12500 and 11250 cm2 V -1 s-1 at sheet concentrations of 3.8×1012 cm-2 and 3.3×1012 cm-2, respectively. These record values are attributed directly to the effects of the piezoelectric fields which positioned the electrons away from the influence of the well edges and the ionised impurities
Keywords :
III-V semiconductors; Schrodinger equation; aluminium compounds; carrier mobility; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; piezoelectric semiconductors; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; 300 K; AlInAs-InGaAs-InP; HEMTs; InP; carrier mobility; compressive-strained wells; ionised impurities; modulation doped quantum wells; molecular beam epitaxy; piezoelectric fields; self-consistent Poisson/Schrodinger calculations; tensile-strained wells; well edges;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951493
