Enhancement-mode buried gate InGaP/AlGaAs/lnGaAs heterojunction FETs fabricated by selective wet etching

Author

Okamoto, Y. ; Matsunaga, K. ; Kuzuhara, M.

Author_Institution

Kansai Electron. Res. Lab., NEC Corp., Shiga, Japan

Volume

31

Issue

25

fYear

1995

fDate

12/7/1995 12:00:00 AM

Firstpage

2216

Lastpage

2218

Abstract

Enhancement-mode buried gate InGaP/AlGaAs/InGaAs heterojunction FETs (HJFETs) were successfully fabricated by using a highly-selective wet recess etching technique. The fabricated HJFET exhibited a maximum drain current of 202 mA/nm, a peak transconductance of 330 mS/mm and a gate-drain breakdown voltage of 33 V. Standard deviation of the threshold voltage was 60 mV, which is less than one fifth that of the conventional AlGaAs/InGaAs HJFET. No appreciable frequency dispersion in the drain current was measured, indicating that the developed InGaP/AlGaAs/InGaAs HJFET with a buried gate structure is promising for large-signal microwave power applications

Keywords

III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; junction gate field effect transistors; microwave field effect transistors; microwave power transistors; power field effect transistors; 33 V; HJFETs; InGaP-AlGaAs-InGaAs; drain current; enhancement-mode buried gate heterojunction FETs; gate-drain breakdown voltage; large-signal microwave power applications; peak transconductance; recess etching technique; selective wet etching; threshold voltage;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19951474

Filename

481057