Title :
Enhancement-mode buried gate InGaP/AlGaAs/lnGaAs heterojunction FETs fabricated by selective wet etching
Author :
Okamoto, Y. ; Matsunaga, K. ; Kuzuhara, M.
Author_Institution :
Kansai Electron. Res. Lab., NEC Corp., Shiga, Japan
fDate :
12/7/1995 12:00:00 AM
Abstract :
Enhancement-mode buried gate InGaP/AlGaAs/InGaAs heterojunction FETs (HJFETs) were successfully fabricated by using a highly-selective wet recess etching technique. The fabricated HJFET exhibited a maximum drain current of 202 mA/nm, a peak transconductance of 330 mS/mm and a gate-drain breakdown voltage of 33 V. Standard deviation of the threshold voltage was 60 mV, which is less than one fifth that of the conventional AlGaAs/InGaAs HJFET. No appreciable frequency dispersion in the drain current was measured, indicating that the developed InGaP/AlGaAs/InGaAs HJFET with a buried gate structure is promising for large-signal microwave power applications
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; junction gate field effect transistors; microwave field effect transistors; microwave power transistors; power field effect transistors; 33 V; HJFETs; InGaP-AlGaAs-InGaAs; drain current; enhancement-mode buried gate heterojunction FETs; gate-drain breakdown voltage; large-signal microwave power applications; peak transconductance; recess etching technique; selective wet etching; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951474
