Title :
Low temperature low pressure MOCVD AlxGa1-xAs layer grown as a dielectric for GaAs MIS devices
Author :
Dubuc, C. ; Beauvais, J. ; Aktik, ç
Author_Institution :
Centre de Recherche en Phys. du Solide, Sherbrooke Univ., Que., Canada
fDate :
12/7/1995 12:00:00 AM
Abstract :
An oxygen doped AlxGa1-xAs layer is demonstrated as a dielectric for GaAs MIS structures. This layer is MOCVD grown at 550°C with an operating pressure of 10 torr. By keeping the aluminium content low, it is possible to obtain a dielectric with relatively high resistivity and very good interface quality
Keywords :
III-V semiconductors; MISFET; aluminium compounds; chemical vapour deposition; dielectric thin films; gallium arsenide; semiconductor-insulator boundaries; 10 torr; 550 degC; GaAs-AlGaAs; MISFETs; interface quality; low pressure MOCVD; operating pressure; resistivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951513
